The simulator is aimed to calculate surface roughness matrix elements for thin silicon films as well as spin relaxation by taking into account surface roughness and electron-phonon interaction.

Project Samples

Intervalley splitting as a function of shear strain Normalized intersubband relaxation matrix elements for shear strain 0.5% shown together with the Fermi distribution at 300K Spin lifetime as a function on strain for the film thickness 3nm. Contributions due to optical, acoustic and surface roughness are included. Normalized intersubband relaxation matrix elements as a function of the conduction electrons kinetic energy in [110] direction. The inset shows the positions of the hot spots for different values of shear strain.

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Categories

Scientific/Engineering, Simulation

License

MIT License

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Registered

2016-04-20
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