#1 PC1D contact boundary conditions

[Anonymous]

I would understand if possibile which boundary conditions PC1D implements at interfaces (for example the base contact).
Understandig it will be useful to simulate a short diode (in which the minoritary diffusion length in the bulk is greater than the thickness of the device) because of in that configuration boundary conditions at interface (especially at base contact) are fundamental to determine the electrical behaviour.
Other device simulators (for example Sentaurus by Synopsys) allow to specify (for an ohmic contact) the finite recombination velocity at electrode and obviously the surface recombination velocity to model the recombination due to traps close to the interface between two materials.

But in the case of PC1D it is not clear how the contact is specified.

Thank you

[wei chen]

As far i know,you can make some decisions about Base/Collector Source Circuit (Excitation menu)