Nanoscale Device Modeling Research Positions
IBM India Semiconductor Research and
Development Center, Bangalore, India.
The IBM India Semiconductor Research and Development Center invites applications from outstanding scientists/engineers for multiple positions in the area of nano science and technology at IBM, Bangalore, India. The candidates are expected to contribute to the design, theory, and modeling of next generation semiconductor nanodevices. The research and development work involves atomistic modeling and Technology-CAD of nano devices.
Atomistic/Quantum Effects in Nanodevices :
This work involves theoretical understanding of quantum effects in 22 nm scale devices; these include carrier transport, geometry and material dependent bandstructure calculations, role of metal and high-k material interfaces, role of high-k on bandstructure and related phenomena to enable development of 22 nm scale devices.
Candidates to be considered for this area are required to have a strong understanding of semiconductor physics and quantum effects in nanodevices. The candidates are also expected to have a strong background in devices physics, electronic structure methods, numerical programming, hands on experience with ab-initio modeling tools, and computer programming in mixed language environment.
Technology – CAD :
This work involves the improvement and development of an IBM proprietary tool for the simulation of leading edge semiconductor devices. In particular, physical and numerical models for carrier transport influenced by e.g., channel materials, strain, high-k materials, and crystallographic orientation on device performance will be developed and implemented.
A comprehensive knowledge of modern device physics is essential to this position, including both FET and BJT device operation, as well as bulk and SOI device structures. Also, a good background and understanding of quantum phenomenon relevant to semiconductor nanodevices is essential.
Computer/Software Skills – Demonstrated proficiency with C++, C, and Tcl are required, and experience with team-based large scale software design is desired. Familiarity with concepts related to numerical solution of PDEs, and the ability to realize robust numerical implementations of semiconductor-related physical models in discretized form, are highly desired. Experience with scientific computation on massively parallel computer architectures is a plus. Familiarity with the Linux and/or AIX operating systems, as well as the AFS file system, would be an added plus.
Qualifications :
Interested applicants for the above regular research positions should have a Ph.D/MS in Physics, Electrical Engineering, Applied Physics, Computer Science, or Theoretical Materials Science. Please send your resume to,
kotamurali@in.ibm.com
About IBM Semiconductor Research and Development Center :
IBM's Semiconductor Research and Development Center is responsible for the definition and development of industry leading technologies such as Copper Interconnect, Silicon on Insulator (SOI), High-Performance Logic-Based Embedded DRAM technologies, and SiGe for RF and analog applications, and high-k material technologies. SRDC is also the leading organization in defining the most advanced technologies for the 45 nm and 22 nm nodes, including research in various aspects of Lithography, strained silicon, and Magnetic RAM (MRAM). IBM SRDC develops all of IBM’s semiconductor technologies including SOI, Bulk CMOS, RFCMOS, HV CMOS, SiGe HBT BiCMOS, and nanodevice technologies. For more information about leadership semiconductor technologies at IBM, please visit www.ibm.com/chips.
Rajan K. Pandey, Ph.D.
Semiconductor Research & Development Center
India Systems & Technology Engineering Lab
IBM India Pvt. Ltd.
MD3 1F B354
Manyata Embassy Business Park
Nagawara, Outer Ring Road
Bangalore - 560045, India
Phone: +91-80-28061262
Email: rajapand@in.ibm.com
Webmail: rajanpandey@gmail.com
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Nanoscale Device Modeling Research Positions
IBM India Semiconductor Research and
Development Center, Bangalore, India.
The IBM India Semiconductor Research and Development Center invites applications from outstanding scientists/engineers for multiple positions in the area of nano science and technology at IBM, Bangalore, India. The candidates are expected to contribute to the design, theory, and modeling of next generation semiconductor nanodevices. The research and development work involves atomistic modeling and Technology-CAD of nano devices.
Atomistic/Quantum Effects in Nanodevices :
This work involves theoretical understanding of quantum effects in 22 nm scale devices; these include carrier transport, geometry and material dependent bandstructure calculations, role of metal and high-k material interfaces, role of high-k on bandstructure and related phenomena to enable development of 22 nm scale devices.
Candidates to be considered for this area are required to have a strong understanding of semiconductor physics and quantum effects in nanodevices. The candidates are also expected to have a strong background in devices physics, electronic structure methods, numerical programming, hands on experience with ab-initio modeling tools, and computer programming in mixed language environment.
Technology – CAD :
This work involves the improvement and development of an IBM proprietary tool for the simulation of leading edge semiconductor devices. In particular, physical and numerical models for carrier transport influenced by e.g., channel materials, strain, high-k materials, and crystallographic orientation on device performance will be developed and implemented.
A comprehensive knowledge of modern device physics is essential to this position, including both FET and BJT device operation, as well as bulk and SOI device structures. Also, a good background and understanding of quantum phenomenon relevant to semiconductor nanodevices is essential.
Computer/Software Skills – Demonstrated proficiency with C++, C, and Tcl are required, and experience with team-based large scale software design is desired. Familiarity with concepts related to numerical solution of PDEs, and the ability to realize robust numerical implementations of semiconductor-related physical models in discretized form, are highly desired. Experience with scientific computation on massively parallel computer architectures is a plus. Familiarity with the Linux and/or AIX operating systems, as well as the AFS file system, would be an added plus.
Qualifications :
Interested applicants for the above regular research positions should have a Ph.D/MS in Physics, Electrical Engineering, Applied Physics, Computer Science, or Theoretical Materials Science. Please send your resume to,
kotamurali@in.ibm.com
About IBM Semiconductor Research and Development Center :
IBM's Semiconductor Research and Development Center is responsible for the definition and development of industry leading technologies such as Copper Interconnect, Silicon on Insulator (SOI), High-Performance Logic-Based Embedded DRAM technologies, and SiGe for RF and analog applications, and high-k material technologies. SRDC is also the leading organization in defining the most advanced technologies for the 45 nm and 22 nm nodes, including research in various aspects of Lithography, strained silicon, and Magnetic RAM (MRAM). IBM SRDC develops all of IBM’s semiconductor technologies including SOI, Bulk CMOS, RFCMOS, HV CMOS, SiGe HBT BiCMOS, and nanodevice technologies. For more information about leadership semiconductor technologies at IBM, please visit www.ibm.com/chips.
Rajan K. Pandey, Ph.D.
Semiconductor Research & Development Center
India Systems & Technology Engineering Lab
IBM India Pvt. Ltd.
MD3 1F B354
Manyata Embassy Business Park
Nagawara, Outer Ring Road
Bangalore - 560045, India
Phone: +91-80-28061262
Email: rajapand@in.ibm.com
Webmail: rajanpandey@gmail.com