Work at SourceForge, help us to make it a better place! We have an immediate need for a Support Technician in our San Francisco or Denver office.

 [Qucs-help] About Harmonic balance analysis From: David Cordova - 2009-06-06 18:06:30 ```Hi my name is David. I'm a student of electrical engineering(*Peru*) and i have some questions about the *HB analysis*: Can i simulate this circuit (in the attach file) is a *Class C RF power amplifier* at 50MHz using the* HB* to achieve a graphic of *(Output power vs Input power) *which is a typical simulation result for a power amplifier. I know can simulate using TRANSIENT simulation but the results are not very accurate. I have the spice model of the POWER MOSFET : ********** *SRC=ARF446;ARF446A/B;MOSFETs N;Power >100V;APT 1000V 8A 1.5ohm TO247-rf *SYM=POWMOSN .SUBCKT ARF446 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 0.712 RS 40 3 38.5M RG 20 2 .2 CGS 2 3 1.47N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 3N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=85.3u VTO=3.8 KP=6.06) .MODEL DCGD D (CJO=1.85N VJ=0.6 M=0.68) .MODEL DSUB D (IS=31.1N N=1.5 RS=0.113 BV=1K CJO=519P VJ=0.8 M=0.42 TT=258N) .MODEL DLIM D (IS=100U) .ENDS Another questions are: - Having only this spice model for my circuit. Which simulation is better to simulate the amplifier response transient or HB. - Using QUCS how accurate can i model a: balun, transforme, RF choke - Can i obtain the s paramaters of this Power MOSFET using only this spice model. Perhaps i can make a documentation of this simulation in order to exchange with you. Best regards David ```
 [Qucs-help] About Harmonic balance analysis From: David Cordova - 2009-06-06 18:06:30 ```Hi my name is David. I'm a student of electrical engineering(*Peru*) and i have some questions about the *HB analysis*: Can i simulate this circuit (in the attach file) is a *Class C RF power amplifier* at 50MHz using the* HB* to achieve a graphic of *(Output power vs Input power) *which is a typical simulation result for a power amplifier. I know can simulate using TRANSIENT simulation but the results are not very accurate. I have the spice model of the POWER MOSFET : ********** *SRC=ARF446;ARF446A/B;MOSFETs N;Power >100V;APT 1000V 8A 1.5ohm TO247-rf *SYM=POWMOSN .SUBCKT ARF446 10 20 30 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 0.712 RS 40 3 38.5M RG 20 2 .2 CGS 2 3 1.47N EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 1.85N R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB LS 30 40 3N .MODEL DMOS NMOS (LEVEL=1 LAMBDA=85.3u VTO=3.8 KP=6.06) .MODEL DCGD D (CJO=1.85N VJ=0.6 M=0.68) .MODEL DSUB D (IS=31.1N N=1.5 RS=0.113 BV=1K CJO=519P VJ=0.8 M=0.42 TT=258N) .MODEL DLIM D (IS=100U) .ENDS Another questions are: - Having only this spice model for my circuit. Which simulation is better to simulate the amplifier response transient or HB. - Using QUCS how accurate can i model a: balun, transforme, RF choke - Can i obtain the s paramaters of this Power MOSFET using only this spice model. Perhaps i can make a documentation of this simulation in order to exchange with you. Best regards David ```